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Thesis

The theory of the absorption edge in semiconductors

Abstract:

The thesis is concerned with optical absorption by a semiconductor due to the excitation of electrons from the valence band to the conduction band giving rise to the phenomenon of the absorption edge. In treating the final state of the semiconductor in such an absorption process it is shewn that the system Bay be considered as a two particle one in which the excited electron in the conduction band is bound to the hole left behind in the valence band, which behaves in many ways like a posit...

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Peer review status:
Peer Reviewed

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Department:
University of Oxford
Role:
Author
This thesis was digitised thanks to the generosity of Dr Leonard Polonsky More from this funder
Publication date:
1959
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Local pid:
polonsky:9:35

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