Thesis
Atom probe tomography insights into stacking faults in zincblende ingan/gan quantum well devices
- Abstract:
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InGaN-based III-nitride light-emitting diodes (LEDs) have revolutionised optoelectronics, offering tunable bandgaps across the visible spectrum for applications ranging from solid-state lighting and displays to optical communication, sensing, and emerging quantum technologies. However, their emission efficiency in the green spectral region remains significantly lower than that of blue counterparts, which is a long-standing limitation known as the ‘green gap’. A promising strategy to overcome ...
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- Files:
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(Preview, Dissemination version, pdf, 9.9MB, Terms of use)
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Authors
Contributors
+ Moody, M
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Materials
- Role:
- Supervisor
+ Bagot, P
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Materials
- Role:
- Supervisor
- ORCID:
- 0000-0002-9102-6083
+ Hofer, C
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Materials
- Role:
- Supervisor
+ Martin, T
- Role:
- Examiner
+ RIGUTTI, L
- Role:
- Examiner
- DOI:
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
- Language:
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English
- Deposit date:
-
2026-04-29
- ARK identifier:
Terms of use
- Copyright holder:
- Ruiying Shu
- Copyright date:
- 2025
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