Thesis
Digital active gate drives to increase power semiconductor performance
- Abstract:
-
Active Gate Drives (AGDs) tailor the signal applied to the gates of power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs) to improve the switching behaviour of these power semiconductor devices. The AGDs can slow down the transition when switching between the off and on states (and vice-versa) to reduce peak transient voltages and electromagnetic interference (EMI). However, the longer duration of the switching transition can lead...
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Authors
Contributors
+ Rogers, D
- Institution:
- University of Oxford
- Division:
- MPLS
- Department:
- Engineering Science
- Sub department:
- Engineering Science
- Research group:
- Power Electronics Group
- Role:
- Supervisor
- ORCID:
- https://orcid.org/ 0000-0001-8814-5332
+ Stavrinou, P
- Role:
- Examiner
+ Stark, B
- Role:
- Examiner
+ Engineering and Physical Sciences Research Council
More from this funder
- Funder identifier:
- http://dx.doi.org/10.13039/501100000266
- Funding agency for:
- Rogers, D
- Jones, GT
- Grant:
- EP/L019469/1
- 1798093
- Programme:
- EPSRC DTA Studentship
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
- Language:
-
English
- Keywords:
- Subjects:
- Deposit date:
-
2021-10-09
Terms of use
- Copyright holder:
- Jones, GT
- Copyright date:
- 2021
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