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The velocity-field characteristic of indium phosphide

Abstract:

The introductory chapter commences with a brief perspective, continues with a description of the compound III-V semiconductors and concludes with a survey of solid-state microwave devices including current commercial and state-of-the-art results.

The properties of indium phosphide are outlined in Chapter two commencing with the preparation and physical properties, continuing with a description of the band-structure and related electrical properties and including a survey of scatteri...

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Peer review status:
Peer reviewed

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Department:
University of Oxford
Role:
Author
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Source identifiers:
601870430
UUID:
uuid:f6d85a0f-e652-40f7-94a8-2e0194fd3419
Local pid:
polonsky:7:34
Deposit date:
2017-10-05

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