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Microstructural studies of high dose oxygen implanted silicon

Abstract:

This work describes results obtained from detailed TEM, TED, HREM and SIMS analysis of the as-implanted and annealed microstructures of high dose (O.lxl0 17/cm2 to 1.7xl018/cm²) oxygen implanted silicon (Si). Molecular oxygen (O2+) has been implanted into Si wafers at equivalent energies of 200keV/O + , 90keV/O +, 70keV/O+ and 50keV/O+ to form, after annealing in flowing N2 or Ar + ½ %O2, buried SiO2 layers below single cry...

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Institution:
University of Oxford
Department:
Faculty of Physical Sciences

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Role:
Supervisor
Role:
Supervisor
Publication date:
1993
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Barcode:
603849225
URN:
uuid:d0c65fa4-f0b4-4654-800f-53c7f182dad0
Local pid:
td:603849225
Language:
English
Subjects:

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