Thesis

Microstructural studies of high dose oxygen implanted silicon

Abstract:: This work describes results obtained from detailed TEM, TED, HREM and SIMS analysis of the as-implanted and annealed microstructures of high dose (O.lxl0 17/cm2 to 1.7xl0¹⁸/cm²) oxygen implanted silicon (Si). Molecular oxygen (O₂⁺) has been implanted into Si wafers at equivalent energies of 200keV/O + , 90keV/O +, 70keV/O+ and 50keV/O+ to form, after annealing in flowing N₂ or Ar + ½ %O₂, buried SiO₂ layers below single cry...
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APA Style

Marsh, C., & Marsh, C. (1993). Microstructural studies of high dose oxygen implanted silicon [PhD thesis]. University of Oxford.

MLA Style

Marsh, C., and Chris Marsh. Microstructural Studies of High Dose Oxygen Implanted Silicon. University of Oxford, 1993.

Chicago Style

Marsh, C, and Chris Marsh. 1993. “Microstructural Studies of High Dose Oxygen Implanted Silicon.” PhD thesis, University of Oxford.
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Files:: 603849225.pdf

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Authors

+ Marsh, C More by this author

Institution:: University of Oxford
Department:: Faculty of Physical Sciences
Role:: Author

+ Marsh, Chris More by this author

Role:: Author

Contributors

Role:: Supervisor

Role:: Supervisor

Publication date:: 1993
Type of award:: DPhil
Level of award:: Doctoral
Awarding institution:: University of Oxford

Language:: English
Subjects:: Oxidation

Silicon
UUID:: uuid:d0c65fa4-f0b4-4654-800f-53c7f182dad0
Local pid:: td:603849225
Source identifiers:: 603849225
Deposit date:: 2013-01-21

Terms of use

Copyright holder:: Marsh, Chris
Copyright date:: 1993
Notes:: The digital copy of this thesis has been made available thanks to the generosity of Dr Leonard Polonsky

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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