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An investigation of efficient room temperature luminescence from silicon which contains dislocations

Abstract:

This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of near-surface dislocation loops to a silicon substrate by boron ion implantation and high temperature annealing produced efficient electroluminescence at room temperature. However, the mechanism by which high efficiency luminescence is produced was not understood. A wide matrix of specimens contain...

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Institution:
University of Oxford
Research group:
Semiconductor Group
Oxford college:
St Anne's College
Department:
Mathematical,Physical & Life Sciences Division - Materials

Contributors

Role:
Supervisor
Publication date:
2006
Type of award:
DPhil
Level of award:
Doctoral
URN:
uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d
Local pid:
ora:1657

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