Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition

Journal article

High-efficiency solar cell architectures, including silicon heterojunction (SHJ) and perovskite/silicon tandems, rely heavily on the unique properties of transparent conducting oxides (TCOs). The push towards terawatt-scale PV manufacturing means it is increasingly desirable to develop indium-free TCOs to facilitate the upscaled manufacturing of high-efficiency cell designs. Aluminium-doped ZnO (AZO) deposited by atomic layer deposition (ALD) has emerged as a promising candidate due to its combination of optical transparency and electrical conductivity. In addition, AZO has also been shown to passivate the c-Si surface. The ability for one material to provide all three properties without requiring any indium is advantageous in single junction and tandem solar devices. Herein, we demonstrate exceptional silicon surface passivation using AZO/AlOx stacks deposited with ALD, with a J0 < 1 fA cm−2 and corresponding implied open circuit voltage (iVOC) of 740 mV. We provide a comprehensive analysis of the role of ALD precursor dosing to achieve optimised performance. A broad range of characterisation approaches were used to probe the structural, compositional, and chemical properties of AZO films. These indicated that the passivation properties are governed by a delicate interplay between the Zn and Al concentrations in the film, highlighting the importance of precise process control. Optical modelling in a single junction SHJ architecture indicates these AZO films are close in performance to high-mobility indium-containing TCOs. The insights provided by this work may help to further the case of indium-free TCOs, which is critical for upscaled production of high-efficiency solar cells.

Authors: Wang, Y; Hobson, TD; Swallow, JEN; McNab, S; O'Sullivan, J

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Royal Society of Chemistry
• Journal: Energy Advances
• Volume: 4
• Pages: 553-564
• Publication date: 2025-02-03
• Acceptance date: 2025-01-31
• DOI: 10.1039/d4ya00552j
• EISSN: 2753-1457
• Language: English