Data in support of Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition

Wang, Y; Hobson, T; Swallow, J; McNab, S; O'Sullivan, J; Soeriyadi, A; Niu, X; Fraser, R; Dasgupta, A; Maitra, S; Altermatt, P; Weatherup, R; Wright, M; Bonilla, RS

Documentation:: All data reported in publication: Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition

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APA Style

Wang, Y., Hobson, T., Swallow, J., McNab, S., O'Sullivan, J., Soeriyadi, A., Niu, X., Fraser, R., Dasgupta, A., Maitra, S., Altermatt, P., Weatherup, R., Wright, M., & Bonilla, R. S. (2025). Data in support of Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition. University of Oxford.

MLA Style

Wang, Y., et al. Data in Support of Impact of Precursor Dosing on the Surface Passivation of AZO/AlOx Stacks Formed Using Atomic Layer Deposition. University of Oxford, 2025.

Chicago Style

Wang, Y, T Hobson, J Swallow, S McNab, J O'Sullivan, A Soeriyadi, X Niu, et al. 2025. “Data in Support of Impact of Precursor Dosing on the Surface Passivation of AZO/AlOx Stacks Formed Using Atomic Layer Deposition.” University of Oxford.
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Authors/Creators

+ Wang, Y More by this author/creator

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Creator

+ Hobson, T More by this author/creator

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Creator

+ Swallow, J More by this author/creator

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Creator

+ McNab, S More by this author/creator

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Creator

+ O'Sullivan, J More by this author/creator

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Creator

More authors...

+ UK Research and Innovation More from this funder

Funder identifier:: https://ror.org/001aqnf71
Grant:: EP/Y027884/1

+ Royal Academy of Engineering More from this funder

Funder identifier:: https://ror.org/0526snb40
Grant:: RF\201819\18\38

+ Engineering and Physical Sciences Research Council More from this funder

Funder identifier:: https://ror.org/0439y7842
Grant:: EP/X037169/1; EP/V038605/1

+ John Fell Fund More from this funder

Publisher:: University of Oxford
Publication date:: 2025

Language:: English
Pubs id:: 2086020
Local pid:: pubs:2086020
Deposit date:: 2025-02-14

Related item:: Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition
Description:: High-efficiency solar cell architectures, including silicon heterojunction (SHJ) and perovskite/silicon tandems, rely heavily on the unique properties of transparent conducting oxides (TCOs). The push towards terawatt-scale PV manufacturing means it is increasingly desirable to develop indium-free TCOs to facilitate the upscaled manufacturing of high-efficiency cell designs. Aluminium-doped ZnO (AZO) deposited by atomic layer deposition (ALD) has emerged as a promising candidate due to its combination of optical transparency and electrical conductivity. In addition, AZO has also been shown to passivate the c-Si surface. The ability for one material to provide all three properties without requiring any indium is advantageous in single junction and tandem solar devices. Herein, we demonstrate exceptional silicon surface passivation using AZO/AlOx stacks deposited with ALD, with a J0 < 1 fA cm−2 and corresponding implied open circuit voltage (iVOC) of 740 mV. We provide a comprehensive analysis of the role of ALD precursor dosing to achieve optimised performance. A broad range of characterisation approaches were used to probe the structural, compositional, and chemical properties of AZO films. These indicated that the passivation properties are governed by a delicate interplay between the Zn and Al concentrations in the film, highlighting the importance of precise process control. Optical modelling in a single junction SHJ architecture indicates these AZO films are close in performance to high-mobility indium-containing TCOs. The insights provided by this work may help to further the case of indium-free TCOs, which is critical for upscaled production of high-efficiency solar cells.

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