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Active gate drive to increase the power capacity of hard-switched IGBTs

Abstract:

The effect of the gate drive on the power-processing capacity of a hard-switched Insulated Gate Bipolar Transistor (IGBT) in a bridge leg is investigated in this paper. The performance of two Active Gate Drive (AGD) techniques (Variable Ramp (VR) and Push-Pull (PP)) is compared against a conventional two-level (Fast Gate Drive (FGD)) gate drive method. The two proposed techniques reduce the voltage overshoot, which allows the dc-bus voltage to be increased closer to the IGBT voltage rating, i...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1109/JESTPE.2020.2986097

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Oxford college:
St Cross College
Role:
Author
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Name:
Engineering and Physical Sciences Research Council
Grant:
EP/1798093
EP/L019469/1
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Journal of Emerging and Selected Topics in Power Electronics More from this journal
Volume:
9
Issue:
2
Pages:
2247-2257
Publication date:
2020-04-06
Acceptance date:
2020-03-27
DOI:
EISSN:
2168-6785
ISSN:
2168-6777
Language:
English
Keywords:
Pubs id:
1098541
Local pid:
pubs:1098541
Deposit date:
2020-04-03

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