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Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films

Abstract:

We describe the development of cross-correlation based high resolution electron backscatter diffraction (HR-EBSD) and electron channelling contrast imaging (ECCI), in the scanning electron microscope (SEM), to quantitatively map the strain variation and lattice rotation and determine the density and identify dislocations in nitride semiconductor thin films. These techniques can provide quantitative, rapid, non-destructive analysis of the structural properties of materials with a spatial resol...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1016/j.actamat.2016.11.039

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Department:
St Cross College
Vilalta-Clemente, A More by this author
Naresh-Kumar, G More by this author
Nouf-Allehiani, M More by this author
Gamarra, P More by this author
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Publisher:
Elsevier Publisher's website
Journal:
Acta Materialia Journal website
Volume:
125
Pages:
125–135
Publication date:
2016-12-05
Acceptance date:
2016-11-15
DOI:
ISSN:
0956-7151
Pubs id:
pubs:660358
URN:
uri:5552be92-5817-4f4b-bc83-606f6a4a663e
UUID:
uuid:5552be92-5817-4f4b-bc83-606f6a4a663e
Local pid:
pubs:660358

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