Conference item
Measurement of electron-phonon interaction time of niobium using heating effect in SIS tunnel junction
- Abstract:
-
The heating of SIS tunnel junctions by local oscillator (LO) power and bias voltage is well known and has been reported previously. In this paper, we present a novel method for recovering the heating parameters from the experimental pumped I-V curves of an SIS device at 700 GHz, together with the coupled LO power and the embedding impedance. Since this is obtained without assuming a particular power law between LO power and junction temperature, we will be able to find τeph, the electron-phonon interaction time of the superconducting material at various bath temperatures. We would deduce a power law that describes the dependence of the heat flow equation on temperature.
- Publication status:
- Published
- Peer review status:
- Reviewed (other)
Actions
Authors
- Publisher:
- National Radio Astronomy Observatory
- Host title:
- 20th International Symposium on Space Terahertz Technology
- Journal:
- International Symposium on Space Terahertz Technology More from this journal
- Issue:
- 20
- Pages:
- 275-277
- Publication date:
- 2009-04-24
- Keywords:
- Pubs id:
-
pubs:1030470
- UUID:
-
uuid:4f4010cd-65f9-4425-b00f-ac15e1617f60
- Local pid:
-
pubs:1030470
- Source identifiers:
-
1030470
- Deposit date:
-
2019-07-09
Terms of use
- Copyright holder:
- National Radio Astronomy Observatory
- Copyright date:
- 2009
- Notes:
- © National Radio Astronomy Observatory 2009. This is the accepted manuscript version of the article. The final version is available online from National Radio Astronomy Observatory
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