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High-resolution electron microscopy of dislocation geometries

Abstract:

Conventional strong-beam imaging techniques have been widely applied in the study of crystal defects, the main advantage being the high intensity of the images which reduces photographic exposure times to a few seconds at most, thus avoiding problems of drift and contamination. However, such images have the disadvantage of not being related in any simple way to the defect geometry, and they are relatively insensitive to small changes in the strain field. The width of a peak from a dislocat...

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Department:
University of Oxford
Role:
Author


DOI:
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford


UUID:
uuid:411d4a49-b58f-4782-ac16-7bca69a7dfa7
Local pid:
polonsky:7:42
Source identifiers:
601870445
Deposit date:
2017-10-05
ARK identifier:

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