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Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility

Abstract:

Reliable doping is required to realize many devices based on semiconductor nanowires. Group III-V nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not compromised by the inclusion of dopants. Here we show that GaAs nanowires can be n-type doped with negligible loss of electron mobility. Molecular beam epitaxy was used to fabricate modulation-doped GaAs nanowires with Al0.33Ga0.67As shells tha...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1021/nl504566t

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
Conesa-Boj, S More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics
Tütüncüoglu, G More by this author
Matteini, F More by this author
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Engineering and Physical Sciences Research Council More from this funder
Swiss National Science Foundation More from this funder
Publisher:
American Chemical Society Publisher's website
Journal:
Nano letters Journal website
Volume:
15
Issue:
2
Pages:
1336-1342
Publication date:
2015-02-05
DOI:
EISSN:
1530-6992
ISSN:
1530-6984
URN:
uuid:1fb48876-e8f6-4b1f-ba48-4f256fab0538
Source identifiers:
505727
Local pid:
pubs:505727

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