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Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Abstract:

The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlOx, HfOx, and ZrOx, on the operating characteristics of In2O3 TFTs. Six diffe...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.5036809

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Role:
Author
ORCID:
0000-0001-6374-1840
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Role:
Author
ORCID:
0000-0001-6943-2512
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Role:
Author
ORCID:
0000-0002-0694-5297
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Role:
Author
ORCID:
0000-0002-4918-2365
Publisher:
AIP Publishing
Journal:
AIP Advances More from this journal
Volume:
8
Issue:
6
Article number:
065015
Publication date:
2018-06-13
Acceptance date:
2018-06-05
DOI:
EISSN:
2158-3226
ISSN:
2158-3226
Language:
English
Keywords:
Pubs id:
pubs:860074
UUID:
uuid:075131c7-4285-43b7-8cc4-66273f043aa5
Local pid:
pubs:860074
Source identifiers:
860074
Deposit date:
2019-04-11

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