Journal article
Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization
- Abstract:
-
The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlOx, HfOx, and ZrOx, on the operating characteristics of In2O3 TFTs. Six diffe...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Authors
Bibliographic Details
- Publisher:
- AIP Publishing Publisher's website
- Journal:
- AIP Advances Journal website
- Volume:
- 8
- Issue:
- 6
- Article number:
- 065015
- Publication date:
- 2018-06-13
- Acceptance date:
- 2018-06-05
- DOI:
- EISSN:
-
2158-3226
- ISSN:
-
2158-3226
Item Description
- Language:
- English
- Keywords:
- Pubs id:
-
pubs:860074
- UUID:
-
uuid:075131c7-4285-43b7-8cc4-66273f043aa5
- Local pid:
- pubs:860074
- Source identifiers:
-
860074
- Deposit date:
- 2019-04-11
Terms of use
- Copyright holder:
- Mottram et al
- Copyright date:
- 2018
- Notes:
- © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
- Licence:
- CC Attribution (CC BY)
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