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Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

Abstract:

An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho[2,3-b:2',3'-f] thieno[3,2-b]thiophene were deposited by thermal evaporation. The gate dielectric was deposited in a vacuum roll-to-roll environment at a web speed of 25 m/min by flash-evaporation ...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted manuscript

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Publisher copy:
10.1016/j.orgel.2016.01.017

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Avila-Nino, JA More by this author
Patchett, ER More by this author
Taylor, DM More by this author
Yeates, SG More by this author
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Publisher:
Elsevier Publisher's website
Journal:
Organic Electronics Journal website
Volume:
31
Pages:
77-81
Publication date:
2016-01-20
DOI:
ISSN:
1566-1199
URN:
uuid:026ddd51-ca93-4d1d-8dee-dfc44c76d489
Source identifiers:
596432
Local pid:
pubs:596432

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