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GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE

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APA Style

Haywood, S., Martin, R., Mason, N., Nicholas, R., & Walker, P. (1991). GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE. 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, 107(1-4), 422–427.

MLA Style

Haywood, S, et al. “GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE.” 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, vol. 107, nos. 1-4, 1991, pp. 422–27.

Chicago Style

Haywood, S, R Martin, N Mason, R Nicholas, and P Walker. 1991. “GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE.” In 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY, 107:422–27.
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Publisher copy:: 10.1016/0022-0248(91)90497-S

Authors

+ Haywood, S More by this author

Role:: Author

+ Martin, R More by this author

Role:: Author

+ Mason, N More by this author

Role:: Author

+ Nicholas, R More by this author

Role:: Author

+ Walker, P More by this author

Role:: Author

Journal:: JOURNAL OF CRYSTAL GROWTH More from this journal
Volume:: 107
Issue:: 1-4
Pages:: 422-427
Publication date:: 1991-01-01
Event title:: 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY
DOI:: 10.1016/0022-0248(91)90497-S
ISSN:: 0022-0248

Keywords:: InAs

MOLECULAR-BEAM EPITAXY

GASB
Pubs id:: pubs:7630
UUID:: uuid:ff1efce7-1b36-48e1-9738-579674f581e0
Local pid:: pubs:7630
Source identifiers:: 7630
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_ff1efce71b3648e19738579674f581e0

Terms of use

Copyright date:: 1991

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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