Journal article
Faraday-cage-assisted etching of suspended gallium nitride nanostructures
- Abstract:
- We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Version of record, 2.7MB, Terms of use)
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- Publisher copy:
- 10.1063/5.0007947
Authors
+ Engineering and Physical Sciences Research Council
More from this funder
- Grant:
- EP/P006973/1; CSHubFS05
- Publisher:
- AIP Publishing
- Journal:
- AIP Advances More from this journal
- Volume:
- 10
- Issue:
- 2020
- Article number:
- 055319
- Publication date:
- 2020-05-21
- Acceptance date:
- 2020-04-28
- DOI:
- ISSN:
-
2158-3226
- Language:
-
English
- Keywords:
- Pubs id:
-
1102531
- Local pid:
-
pubs:1102531
- Deposit date:
-
2020-04-30
Terms of use
- Copyright holder:
- Gough et al.
- Copyright date:
- 2020
- Rights statement:
- © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0007947., s
- Licence:
- CC Attribution (CC BY)
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