Study of spin pumping through α-Sn thin films

Journal article : Letter

Elemental tin in the α-phase is an intriguing member of the family of topological quantum materials. In thin films, with decreasing thickness, α-Sn transforms from a three-dimensional (3D) topological Dirac semimetal (TDS) to a two-dimensional (2D) topological insulator (TI). Getting access to and making use of their topological surface states is challenging and requires interfacing to a magnetically ordered material. Here, we report the successful epitaxial growth of α-Sn thin films on Co, forming the core of a spin-valve structure. We carried out time- and element-selective ferromagnetic resonance experiments to investigate the presence of spin pumping through the spin-valve structure. We applied a rigorous statistical analysis of the experimental data using a Landau-Lifshitz-Gilbert-Slonczewski equation based model. A strong exchange coupling contribution was found, however no unambiguous proof for spin pumping. Nevertheless, the incorporation of α-Sn into a spin-valve remains a promising approach given its simplicity as an elemental TI and its room temperature application potential.

Authors: Gladzcuk, L; Gladczuk, L; Dluzewski, P; van der Laan, G; Hesjedal, T

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Wiley
• Journal: Physica Status Solidi: Rapid Research Letters
• Volume: 15
• Issue: 6
• Article number: 2100137
• Publication date: 2021-05-03
• Acceptance date: 2021-04-09
• DOI: 10.1002/pssr.202100137
• EISSN: 1862-6270
• ISSN: 1862-6254
• Language: English
• Keywords: FFR
• Subtype: Letter