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Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure

Abstract:

We present a model to describe the mechanisms involved in tunneling between the quasiconfined X sub-bands of the AlAs layers in GaAs/AlAs double-barrier structures at pressures up to the type-II transition. The model involves self-consistent Schrödinger-Poisson calculation of the potential profiles within the device for a given relative alignment between the two X-like quantum wells, and thus allows prediction of the bias positions at which certain resonant tunneling processes will occur. By ...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Physical Review B - Condensed Matter and Materials Physics More from this journal
Volume:
57
Issue:
3
Pages:
1740-1745
Publication date:
1998-01-15
ISSN:
0163-1829
Language:
English
Pubs id:
pubs:133849
UUID:
uuid:fb003384-cc30-4588-bf95-f5c85d8f1a24
Local pid:
pubs:133849
Source identifiers:
133849
Deposit date:
2012-12-19

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