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CALCULATIONS FOR DEFECT STRENGTH DETERMINATIONS

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APA Style

Holt, D., Napchan, E., & Norman, C. (1989). CALCULATIONS FOR DEFECT STRENGTH DETERMINATIONS. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 205–210.

MLA Style

Holt, D, et al. “CALCULATIONS FOR DEFECT STRENGTH DETERMINATIONS.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 205–10.

Chicago Style

Holt, D, E Napchan, and C Norman. 1989. “CALCULATIONS FOR DEFECT STRENGTH DETERMINATIONS.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:205–10.
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Authors

+ Holt, D More by this author

Role:: Author

+ Napchan, E More by this author

Role:: Author

+ Norman, C More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 205-210
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: SILICON

SEM

SEMICONDUCTORS

dislocations

EBIC CONTRAST
Pubs id:: pubs:8638
UUID:: uuid:f9777cef-7537-4c5e-8bb3-c70d33c01ba8
Local pid:: pubs:8638
Source identifiers:: 8638
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f9777cef75374c5e8bb3c70d33c01ba8

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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