Cadmium and Zinc‐Doped p‐type Sb 2 Se 3 Single Crystals and Solar Cells

Journal article

Achieving controlled p‐type doping in Sb2Se3 is critical for its development as a photovoltaic absorber. In this work, the incorporation of Cd and Zn as extrinsic dopants in Sb2Se3 single crystals and thin films, with concentrations ranging from 1016 to 1020 cm − 3 $\left(\text{cm}\right)^{- 3}$ , is investigated. Both dopants successfully induce p‐type conductivity, but Cd consistently yields lower resistivities and avoids compensation over a wider range of dopant concentrations. Cd‐doped Sb2Se3 single crystals exhibit hole densities exceeding 10 cm − 3 $\left(\text{cm}\right)^{- 3}$ , while thin films achieve over 10 cm − 3 $\left(\text{cm}\right)^{- 3}$ , values suitable for efficient solar cell operation. A shallow 22 meV Cd Sb $\left(\text{Cd}\right)_{\text{Sb}} \textrm{ }$ acceptor level appears to be compensated by a deeper lying state around 389 meV, which is intrinsic to Sb2Se3 and limits the achievable free hole concentration. Despite this, solar cells fabricated using Cd‐doped Sb2Se3 (at 10 cm − 3 $\left(\text{cm}\right)^{- 3}$ ) show enhancements in open‐circuit voltage by ≈60 and ≈20 mV for devices prepared via thermal evaporation and close‐spaced sublimation respectively, relative to n‐type Cl‐doped Sb2Se3. These results establish Cd as a promising dopant for enabling robust p‐type conductivity and enhancing the photovoltaic performance of Sb2Se3‐based devices.

Authors: Shalvey, TP; Hobson, TDC; Herklotz, F; Kaupmees, R; Almushawwah, AA

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: Wiley
• Journal: Advanced Energy & Sustainability Research
• Article number: e202500386
• Publication date: 2025-12-20
• DOI: 10.1002/aesr.202500386
• EISSN: 2699-9412
• ISSN: 2699-9412
• Language: English
• Keywords: p‐type; solar cell; Sb2Se3; photovoltaic; doping