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High-performance devices from surface-conducting thin-film diamond

Abstract:

Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thin-film diamond has been turned p-type by the incorporation of near-surface hydrogen, a type of film often referred to as `surface conducting'. Schottky diodes and metal-semiconductor FETs (MESFETs)...

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Publication status:
Published

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Authors


Jackman, RB More by this author
Whitfield, MD More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Publisher:
Elsevier Science Ltd
Volume:
37
Issue:
5
Pages:
817-822
Publication date:
1999
DOI:
ISSN:
0008-6223
URN:
uuid:f862999c-f11a-4d5c-bdf1-4ddaff6f5b69
Source identifiers:
37003
Local pid:
pubs:37003

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