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High-performance devices from surface-conducting thin-film diamond

Abstract:

Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this paper commercially accessible polycrystalline thin-film diamond has been turned p-type by the incorporation of near-surface hydrogen, a type of film often referred to as `surface conducting'. Schottky diodes and metal-semiconductor FETs (MESFETs)...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Publisher:
Elsevier
Host title:
CARBON
Volume:
37
Issue:
5
Pages:
817-822
Publication date:
1999-01-01
DOI:
ISSN:
0008-6223
Keywords:
Pubs id:
pubs:37003
UUID:
uuid:f862999c-f11a-4d5c-bdf1-4ddaff6f5b69
Local pid:
pubs:37003
Source identifiers:
37003
Deposit date:
2012-12-19

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