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EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

Publication status:
Published

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Publisher copy:
10.1016/0038-1098(78)90997-3

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Journal:
SOLID STATE COMMUNICATIONS More from this journal
Volume:
26
Issue:
1
Pages:
11-15
Publication date:
1978-01-01
DOI:
ISSN:
0038-1098


Pubs id:
pubs:26995
UUID:
uuid:f7bc27da-2d6e-458a-bc60-28219564690d
Local pid:
pubs:26995
Source identifiers:
26995
Deposit date:
2012-12-19
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