Journal article
Pressure-dependent relaxation in the photoexcited mott insulator ET-F2TCNQ: influence of hopping and correlations on quasiparticle recombination rates.
- Abstract:
- We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F(2)TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
- Publication status:
- Published
Actions
Access Document
- Publisher copy:
- 10.1103/physrevlett.112.117801
Authors
- Journal:
- Physical Review Letters More from this journal
- Volume:
- 112
- Issue:
- 11
- Pages:
- 117801
- Publication date:
- 2014-03-18
- DOI:
- EISSN:
-
1079-7114
- ISSN:
-
0031-9007
- Language:
-
English
- Keywords:
- Pubs id:
-
pubs:462106
- UUID:
-
uuid:f777a613-e283-4d9a-b53c-1c14b4b6abec
- Local pid:
-
pubs:462106
- Source identifiers:
-
462106
- Deposit date:
-
2014-06-17
- ARK identifier:
Terms of use
- Copyright date:
- 2014
If you are the owner of this record, you can report an update to it here: Report update to this record