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Pressure-dependent relaxation in the photoexcited mott insulator ET-F2TCNQ: influence of hopping and correlations on quasiparticle recombination rates.

Abstract:
We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F(2)TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
Publication status:
Published

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Publisher copy:
10.1103/physrevlett.112.117801

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Institution:
University of Oxford
Department:
Oxford
Role:
Author


Journal:
Physical Review Letters More from this journal
Volume:
112
Issue:
11
Pages:
117801
Publication date:
2014-03-18
DOI:
EISSN:
1079-7114
ISSN:
0031-9007


Language:
English
Keywords:
Pubs id:
pubs:462106
UUID:
uuid:f777a613-e283-4d9a-b53c-1c14b4b6abec
Local pid:
pubs:462106
Source identifiers:
462106
Deposit date:
2014-06-17
ARK identifier:

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