The morphology and composition of quantum dots

Conference item

Abstract:: A number of methods for investigating the structure and composition of quantum dots are discussed, with particular emphasis on the modelling of QD compositional profiles. It is shown that the method of on-zone Bright field TEM imaging is sensitive to composition profiles, and the technique has been applied to alloy profiles in the Ge/Si and InGaAs/GaAs systems. Combining this technique with energy filtered imaging and x-ray profiles results in a refined QD growth model.

Journal:: MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 More from this journal
Issue:: 169
Pages:: 77-83
Publication date:: 2001-01-01
Event title:: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:: 0951-3248
ISBN:: 0750308184

Keywords:: BEAM EPITAXIAL-GROWTH

GAAS

GAAS(001)

ENRICHMENT

TRANSMISSION-ELECTRON-MICROSCOPY
Pubs id:: pubs:4241
UUID:: uuid:f6ed5982-ed4c-4ca1-9219-1a080af05681
Local pid:: pubs:4241
Source identifiers:: 4241
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f6ed5982ed4c4ca192191a080af05681

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