Journal article

Growth of carbon nanotubes on GaAs

Abstract:: Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs. © 2007 Elsevier B.V. All rights reserved.

Publication status:: Published

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APA Style

Engel-Herbert, R., Takagaki, Y., & Hesjedal, T. (2007). Growth of carbon nanotubes on GaAs. MATERIALS LETTERS, 61(23-24), 4631–4634.

MLA Style

Engel-Herbert, R, et al. “Growth of Carbon Nanotubes on GaAs.” MATERIALS LETTERS, vol. 61, nos. 23-24, 2007, pp. 4631–34.

Chicago Style

Engel-Herbert, R, Y Takagaki, and T Hesjedal. 2007. “Growth of Carbon Nanotubes on GaAs.” MATERIALS LETTERS 61 (23-24): 4631–34.
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Publisher copy:: 10.1016/j.matlet.2007.02.063

Authors

+ Engel-Herbert, R More by this author

Role:: Author

+ Takagaki, Y More by this author

Role:: Author

+ Hesjedal, T More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

Journal:: MATERIALS LETTERS More from this journal
Volume:: 61
Issue:: 23-24
Pages:: 4631-4634
Publication date:: 2007-09-01
DOI:: 10.1016/j.matlet.2007.02.063
ISSN:: 0167-577X

Language:: English
Keywords:: VD

GaAs

Nickel

Catalytic growth

Carbon nanotubes
Pubs id:: pubs:151450
UUID:: uuid:f6e3468b-d7f0-43b7-8c47-944d3c4dc928
Local pid:: pubs:151450
Source identifiers:: 151450
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f6e3468bd7f043b78c47944d3c4dc928

Terms of use

Copyright date:: 2007

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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