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Growth of carbon nanotubes on GaAs

Abstract:
Hybrid carbon nanotube-semiconductor systems offer unique properties by combining the advantages of one-dimensional conductors with the broad opportunities of semiconductor technology. Thus, it is desirable to incorporate the nanotube growth in III-V semiconductor systems. We present the directed growth of carbon nanotubes from prepatterned CrNi catalyst structures on GaAs. © 2007 Elsevier B.V. All rights reserved.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
MATERIALS LETTERS More from this journal
Volume:
61
Issue:
23-24
Pages:
4631-4634
Publication date:
2007-09-01
DOI:
ISSN:
0167-577X
Language:
English
Keywords:
Pubs id:
pubs:151450
UUID:
uuid:f6e3468b-d7f0-43b7-8c47-944d3c4dc928
Local pid:
pubs:151450
Source identifiers:
151450
Deposit date:
2012-12-19

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