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Electronic structure at realistic Si(100)-SiO2 interfaces

Publication status:: Published

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APA Style

Giustino, F., Bongiorno, A., & Pasquarello, A. (2004). Electronic structure at realistic Si(100)-SiO2 interfaces. 43(11B), 7895–7898.

MLA Style

Giustino, F, et al. “Electronic Structure at Realistic Si(100)-SiO2 Interfaces.” vol. 43, no. 11B, 2004, pp. 7895–98.

Chicago Style

Giustino, F, A Bongiorno, and A Pasquarello. 2004. “Electronic Structure at Realistic Si(100)-SiO2 Interfaces.” 43 (11B): 7895–98.
Print

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Publisher copy:: 10.1143/JJAP.43.7895

Authors

+ Giustino, F More by this author

Role:: Author

+ Bongiorno, A More by this author

Role:: Author

+ Pasquarello, A More by this author

Role:: Author

Host title:: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and REVIEW PAPERS
Volume:: 43
Issue:: 11B
Pages:: 7895-7898
Publication date:: 2004-11-01
DOI:: 10.1143/JJAP.43.7895
EISSN:: 1347-4065
ISSN:: 0021-4922

Keywords:: band offsets

Si/SiO2 interface

silicon-induced gap states

density functional theory
Pubs id:: pubs:173000
UUID:: uuid:f6449827-fd40-46d1-9f4b-b748b594b11c
Local pid:: pubs:173000
Source identifiers:: 173000
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f6449827fd4046d19f4bb748b594b11c

Terms of use

Copyright date:: 2004

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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