Journal article

The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers

Abstract:: We report a theoretical investigation of carrier trapping in GaAs v-groove quantum wire structures. Our results show that trapping is fast in wires confined by AlGaAs alloy barriers where the growth process creates a Ga-rich vertical quantum well at the center of the v-groove: this acts as a highly effective scattering channel into quantum wires states. The results indicate that with suitable growth engineering, high-efficiency quantum wire structures can be obtained. © 1996 American Institute of Physics.

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APA Style

Kiener, C., Rota, L., Maciel, A., Freyland, J., & Ryan, J. (1995). The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers. Applied Physics Letters, 2061–2061.

MLA Style

Kiener, C, et al. “The Role of Vertical Quantum Wells in Carrier Trapping in v-Groove Quantum Wire Lasers.” Applied Physics Letters, 1995, pp. 2061–61.

Chicago Style

Kiener, C, L Rota, A Maciel, J Freyland, and J Ryan. 1995. “The Role of Vertical Quantum Wells in Carrier Trapping in v-Groove Quantum Wire Lasers.” Applied Physics Letters, 2061–61.
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Authors

+ Kiener, C More by this author

Role:: Author

+ Rota, L More by this author

Role:: Author

+ Maciel, A More by this author

Role:: Author

+ Freyland, J More by this author

Role:: Author

+ Ryan, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

Journal:: Applied Physics Letters More from this journal
Pages:: 2061-2061
Publication date:: 1995-01-01
ISSN:: 0003-6951

Language:: English
Pubs id:: pubs:321833
UUID:: uuid:f5530798-33b5-4f24-bdee-d234c1f9861d
Local pid:: pubs:321833
Source identifiers:: 321833
Deposit date:: 2013-02-20
ARK identifier:: ark:/29072/ora_f553079833b54f24bdeed234c1f9861d

Terms of use

Copyright date:: 1995

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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