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MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Abstract:

Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour phase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conventional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) were used for the assessment of the QDs. Reductions in the (III)/v, ratios and growth rates resulted in a change of the morphology of the InSb islands from hillocks without facets, and a low l...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY More from this journal
Volume:
80
Issue:
1-3
Pages:
112-115
Publication date:
2001-03-22
Event title:
5th Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000)
DOI:
ISSN:
0921-5107
Keywords:
Pubs id:
pubs:27332
UUID:
uuid:f4f94e91-e4dd-4d24-b37c-3b86a969fb43
Local pid:
pubs:27332
Source identifiers:
27332
Deposit date:
2012-12-19

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