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Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates

Abstract:

We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 Ω cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 kΩ cm at room temperature. Coplanar waveguides fabricated on implanted wafers show strongly reduced attenuation down to 0.3 dB mm-1 fr...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
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Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume:
26
Issue:
7
Pages:
072001-072001
Publication date:
2011-07-07
DOI:
EISSN:
1361-6641
ISSN:
0268-1242
URN:
uuid:f3fd6330-e475-495a-ba9e-9c445a35ce48
Source identifiers:
135144
Local pid:
pubs:135144
Language:
English

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