Interface composition dependence of the band offset in InAs/GaSb

Conference item

Abstract:: We have performed 4 K magnetotransport measurements on intrinsic InAs/GaSb multi quantum wells (MQWs) under hydrostatic pressure. Through careful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing the data to calculate the band overlap (Delta), we find that InSb-like samples have an overlap 30 meV larger than GaAs-like in good agreement with recent theoretical predictions.

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Journal:: SURFACE SCIENCE More from this journal
Volume:: 361
Issue:: 1-3
Pages:: 205-208
Publication date:: 1996-01-01
Event title:: 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI)
DOI:: 10.1016/0039-6028(96)00385-8
ISSN:: 0039-6028

Keywords:: quantum wells

magnetic measurements

electrical transport

semiconductor-semiconductor heterostructures

Hall effect

indium arsenide

electrical transport measurements

gallium antimonide
Pubs id:: pubs:22698
UUID:: uuid:f3a7be56-d107-4163-8a94-3381c53ae6de
Local pid:: pubs:22698
Source identifiers:: 22698
Deposit date:: 2012-12-19

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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