Conference icon

Conference

Interface composition dependence of the band offset in InAs/GaSb

Abstract:
We have performed 4 K magnetotransport measurements on intrinsic InAs/GaSb multi quantum wells (MQWs) under hydrostatic pressure. Through careful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing the data to calculate the band overlap (Delta), we find that InSb-like samples have an overlap 30 meV larger than GaAs-like in good agreement with recent theoretical predictions.
Publication status:
Published

Actions


Access Document


Authors


Symons, DM More by this author
Lakrimi, M More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Expand authors...
Volume:
361
Issue:
1-3
Pages:
205-208
Publication date:
1996
DOI:
ISSN:
0039-6028
URN:
uuid:f3a7be56-d107-4163-8a94-3381c53ae6de
Source identifiers:
22698
Local pid:
pubs:22698

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP