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Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Publication status:: Published

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APA Style

Na, J., Taylor, R., Rice, J., Robinson, J., Lee, K., Park, Y., Park, C., & Kang, T. (2005). Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy. APPLIED PHYSICS LETTERS, 86(12), 123102–123102.

MLA Style

Na, J., et al. “Two-Dimensional Exciton Behavior in GaN Nanocolumns Grown by Molecular-Beam Epitaxy.” APPLIED PHYSICS LETTERS, vol. 86, no. 12, 2005, pp. 123102–02.

Chicago Style

Na, J, R Taylor, J Rice, J Robinson, K Lee, Y Park, C Park, and T Kang. 2005. “Two-Dimensional Exciton Behavior in GaN Nanocolumns Grown by Molecular-Beam Epitaxy.” APPLIED PHYSICS LETTERS 86 (12): 123102–.
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Publisher copy:: 10.1063/1.1885187

Authors

+ Na, J More by this author

Role:: Author

+ Taylor, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Rice, J More by this author

Role:: Author

+ Robinson, J More by this author

Role:: Author

+ Lee, K More by this author

Role:: Author

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Journal:: APPLIED PHYSICS LETTERS More from this journal
Volume:: 86
Issue:: 12
Pages:: 123102-123102
Publication date:: 2005-03-21
DOI:: 10.1063/1.1885187
ISSN:: 0003-6951

Pubs id:: pubs:28062
UUID:: uuid:f3304625-45e7-4d63-9aa1-8559c5a87523
Local pid:: pubs:28062
Source identifiers:: 28062
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 2005

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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