Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure

Conference item

We have investigated the 2D --> 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D --> 2D resonant tunneling between confined transverse X-X,X-Y states but not between longitudinal X-Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D --> 2D resonant tunneling between X-Z states, even in a structure with a barrier thickness of 40 Angstrom, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti-symmetric double well states, we show that Gamma-X-Z mixing can produce enhancements of up to approximate to 10(2).

Authors: Im, H; Klipstein, P; Smith, J; Grey, R; Hill, G

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
• Volume: 211
• Issue: 1
• Pages: 489-494
• Publication date: 1999-01-01
• Event title: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII)
• ISSN: 0370-1972
• Keywords: QUANTUM-WELLS