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Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM

Abstract:

We demonstrate that it is possible to observe depth-dependent atomic displacements in a GaN crystal due to the sufficiently small depth of field achievable in the aberration-corrected scanning transmission electron microscope. The depth-dependent displacements associated with the Eshelby twist of screw dislocations in GaN viewed end on are directly imaged, and makes possible the determination of the sign of the Burgers vector of the dislocation. The experimental results are in good agreement ...

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Publication status:
Published

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Publisher copy:
10.1088/1742-6596/522/1/012048

Authors


Publisher:
Institute of Physics Publishing
Host title:
ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2013 (EMAG2013)
Volume:
522
Issue:
1
Pages:
012048-012048
Publication date:
2014-01-01
DOI:
EISSN:
1742-6596
ISSN:
1742-6588
Pubs id:
pubs:474991
UUID:
uuid:f2aace1d-5624-4a80-aee6-12fc14ea9dcd
Local pid:
pubs:474991
Source identifiers:
474991
Deposit date:
2014-10-13

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