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On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures

Abstract:

The interaction between oxygen atoms and dislocations in Czochralski-grown silicon has been studied experimentally. Measurements concerning the locking of dislocations by oxygen atoms have been carried out in the temperature range 450-850degreesC for different annealing times Using samples with low oxygen content (2.6 x 10(17) cm(-3)) it has been possible to investigate the nature of binding of oxygen atoms to dislocations for temperatures lower than 700 degreesC for which diffusion of oxygen...

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Publication status:
Published

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Publisher copy:
10.1088/0953-8984/14/48/361

Authors


Senkader, S More by this author
Giannattasio, A More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
14
Issue:
48
Pages:
13141-13145
Publication date:
2002-12-16
DOI:
ISSN:
0953-8984
URN:
uuid:f260cc10-a098-49b8-b261-47b450ffd005
Source identifiers:
27524
Local pid:
pubs:27524
Keywords:

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