Journal article

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

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APA Style

Mallard, R., Wilshaw, P., Mason, N., Walker, P., & Booker, G. (1989). LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD. INSTITUTE OF PHYSICS CONFERENCE SERIES, 100, 331–336.

MLA Style

Mallard, R, et al. “LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 100, 1989, pp. 331–36.

Chicago Style

Mallard, R, P Wilshaw, N Mason, P Walker, and G Booker. 1989. “LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 100: 331–36.
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Authors

+ Mallard, R More by this author

Role:: Author

+ Wilshaw, P More by this author

Role:: Author

+ Mason, N More by this author

Role:: Author

+ Walker, P More by this author

Role:: Author

+ Booker, G More by this author

Role:: Author

Journal:: INSTITUTE OF PHYSICS CONFERENCE SERIES More from this journal
Issue:: 100
Pages:: 331-336
Publication date:: 1989-01-01
ISSN:: 0951-3248

Pubs id:: pubs:10658
UUID:: uuid:f20beb1d-973f-499c-8410-05e2e40e3908
Local pid:: pubs:10658
Source identifiers:: 10658
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f20beb1d973f499c841005e2e40e3908

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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