Conference item
Structural modelling of nano-amorphous Si-O-N films in silicon nitride ceramics
- Abstract:
- In order to obtain a detailed computational description of the structure and fundamental properties of silicon oxynitride films as thin as 1mn in Si3N4 ceramics, a reliable and transferable many-body inter-atomic potential has been developed for Si-N-O systems and used to perform molecular dynamic (MD) simulations. The modelling results of radial distribution function (RDF) are well compared with experimental measured ones for the inter-granular glassy films (IGFs). The predicted variation of bond-order around Si atoms allow to compare with spatially resolved, electron energy loss spectroscopy (SR-EELS) studies of compositional and chemical profiles of O and N atoms across IGFs.
- Publication status:
- Published
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Authors
- Journal:
- ELECTRON MICROSCOPY AND ANALYSIS 2003 More from this journal
- Issue:
- 179
- Pages:
- 139-142
- Publication date:
- 2004-01-01
- Event title:
- Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003)
- ISSN:
-
0951-3248
- ISBN:
- 0750309679
- Pubs id:
-
pubs:27961
- UUID:
-
uuid:f18a825c-0444-4d3d-9161-150e0aa762e3
- Local pid:
-
pubs:27961
- Source identifiers:
-
27961
- Deposit date:
-
2012-12-19
- ARK identifier:
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- Copyright date:
- 2004
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