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Structural modelling of nano-amorphous Si-O-N films in silicon nitride ceramics

Abstract:
In order to obtain a detailed computational description of the structure and fundamental properties of silicon oxynitride films as thin as 1mn in Si3N4 ceramics, a reliable and transferable many-body inter-atomic potential has been developed for Si-N-O systems and used to perform molecular dynamic (MD) simulations. The modelling results of radial distribution function (RDF) are well compared with experimental measured ones for the inter-granular glassy films (IGFs). The predicted variation of bond-order around Si atoms allow to compare with spatially resolved, electron energy loss spectroscopy (SR-EELS) studies of compositional and chemical profiles of O and N atoms across IGFs.
Publication status:
Published

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Journal:
ELECTRON MICROSCOPY AND ANALYSIS 2003 More from this journal
Issue:
179
Pages:
139-142
Publication date:
2004-01-01
Event title:
Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003)
ISSN:
0951-3248
ISBN:
0750309679


Pubs id:
pubs:27961
UUID:
uuid:f18a825c-0444-4d3d-9161-150e0aa762e3
Local pid:
pubs:27961
Source identifiers:
27961
Deposit date:
2012-12-19
ARK identifier:

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