Dynamics of resonantly excited excitons in GaN

Journal article

We present resonant fs pump-probe reflectance measurements of excitons in wurtzite GaN epilayers at different lattice temperatures. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic-phonon emission on a time scale of 16 ps. At temperatures above 60 K we observe a much longer relaxation component of 375 ps, which is due to radiative recombination of free excitons. The results are in good agreement with theoretical predictions.

Authors: Hess, S; Walraet, F; Taylor, R; Ryan, J; Beaumont, B

• Journal: Physical Review B - Condensed Matter and Materials Physics
• Volume: 58
• Issue: 24
• Publication date: 1998-12-15
• ISSN: 0163-1829
• Language: English