Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands

Journal article

Self organized etching techniques for fabricating a quasiregular array of MnAs nanoislands were discussed. The strain balance in the MnAs layer grown on GaAs substrates collapsed when the heterostructure was immersed in a wet-chemical etch solution and regular row of cracks and submicron-wide strips were carved from it. It was also shown that MnAs islands could serve as a nearly ideal etch mask to create GaAs columns by dry etching.

Authors: Takagaki, Y; Wiebicke, E; Hesjedal, T; Kostial, H; Herrmann, C

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 83
• Issue: 14
• Pages: 2895-2897
• Publication date: 2003-10-06
• DOI: 10.1063/1.1611288
• ISSN: 0003-6951
• Language: English