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INCIPIENT DISLOCATION DIPOLES IN SILICON

Publication status:: Published

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APA Style

Heggie, M. (1989). INCIPIENT DISLOCATION DIPOLES IN SILICON. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 37–42.

MLA Style

Heggie, M. “INCIPIENT DISLOCATION DIPOLES IN SILICON.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 37–42.

Chicago Style

Heggie, M. 1989. “INCIPIENT DISLOCATION DIPOLES IN SILICON.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:37–42.
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Authors

+ Heggie, M More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 37-42
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: DIFFUSION
Pubs id:: pubs:2632
UUID:: uuid:f0a81f64-b9a6-48df-aacd-7c6657db34c2
Local pid:: pubs:2632
Source identifiers:: 2632
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f0a81f64b9a648dfaacd7c6657db34c2

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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