Journal article

A study of n-type GaxIn1-xAsyP1-y-InP quantum wells

Publication status:: Published

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APA Style

Portal, J., Nicholas, R., Brummell, M., Brunel, L., Huant, S., Razeghi, M., & Laviron, M. (1986). A study of n-type GaxIn1-xAsyP1-y-InP quantum wells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1(1), 3–6.

MLA Style

Portal, J, et al. “A Study of n-Type GaxIn1-xAsyP1-y-InP Quantum Wells.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 1, no. 1, 1986, pp. 3–6.

Chicago Style

Portal, J, R Nicholas, M Brummell, et al. 1986. “A Study of n-Type GaxIn1-xAsyP1-y-InP Quantum Wells.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 1 (1): 3–6.
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Publisher copy:: 10.1088/0268-1242/1/1/001

Authors

+ Portal, J More by this author

Role:: Author

+ Nicholas, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Brummell, M More by this author

Role:: Author

+ Brunel, L More by this author

Role:: Author

+ Huant, S More by this author

Role:: Author

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Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:: 1
Issue:: 1
Pages:: 3-6
Publication date:: 1986-07-01
DOI:: 10.1088/0268-1242/1/1/001
EISSN:: 1361-6641
ISSN:: 0268-1242

Pubs id:: pubs:19351
UUID:: uuid:f01ae95a-edc3-447d-a560-77bf82f6d883
Local pid:: pubs:19351
Source identifiers:: 19351
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_f01ae95aedc3447da56077bf82f6d883

Terms of use

Copyright date:: 1986

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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