Sub-wavelength Al mask apertures for addressing individual InGaN quantum dots

Conference item

We describe a lithographic process for the fabrication of small size optical apertures, together with large alignment marks to locate the aperture position during measurements in an optical cryostat. The aperture size is chosen to isolate a small number of dots from a dense self-assembled array of InGaN dots. The pattern was exposed in a chemically-amplified resist, UVIII and transferred to the underlying aluminium layer using reactive ion etching. Micro-photoluminescence measurements show sharp spectral lines of width similar to700 mueV at 4.2 K (limited by the spectral resolution of the monochromator), confirming the isolation of a single quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

Authors: Yasin, S; Khalid, M; Rice, J; Taylor, R

• Publication status: Published
• Journal: MICROELECTRONIC ENGINEERING
• Volume: 73-4
• Pages: 762-766
• Publication date: 2004-06-01
• Event title: 29th International Conference on Micro and Nano Engineering (MNE 2003)
• DOI: 10.1016/j.mee.2004.03.087
• ISSN: 0167-9317
• Keywords: exciton; electron beam lithography; UVIII; Al mask; InGaAs dots