Conference item

Improved Performance of GaAs-based Terahertz Emitters

Abstract:: We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

Publication status:: Published

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APA Style

Headley, C., Fu, L., Parkinson, P., Xu, X., Lloyd-Hughes, J., Jagadish, C., Johnston, M., & IEEE. (2010). Improved Performance of GaAs-based Terahertz Emitters.

MLA Style

Headley, C, et al. “Improved Performance of GaAs-Based Terahertz Emitters.” 2010.

Chicago Style

Headley, C, L Fu, P Parkinson, et al. 2010. “Improved Performance of GaAs-Based Terahertz Emitters.”
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Publisher copy:: 10.1109/ICIMW.2010.5612725

Authors

+ Headley, C More by this author

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+ Fu, L More by this author

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+ Parkinson, P More by this author

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+ Xu, X More by this author

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+ Lloyd-Hughes, J More by this author

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Host title:: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)
Publication date:: 2010-01-01
DOI:: 10.1109/ICIMW.2010.5612725
ISBN:: 9781424466573

Pubs id:: pubs:127288
UUID:: uuid:eecb5c4f-3867-4ef4-b479-d88ad86ee7f9
Local pid:: pubs:127288
Source identifiers:: 127288
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_eecb5c4f38674ef4b479d88ad86ee7f9

Terms of use

Copyright date:: 2010

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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