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Improved Performance of GaAs-based Terahertz Emitters

Abstract:
We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.
Publication status:
Published

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Publisher copy:
10.1109/ICIMW.2010.5612725

Authors


Headley, C More by this author
Parkinson, P More by this author
Lloyd-Hughes, J More by this author
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Publication date:
2010
DOI:
URN:
uuid:eecb5c4f-3867-4ef4-b479-d88ad86ee7f9
Source identifiers:
127288
Local pid:
pubs:127288
ISBN:
9781424466573

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