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DISLOCATIONS IN INDENTED GAALAS

Publication status:: Published

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APA Style

Charsley, P., & Haswell, R. (1989). DISLOCATIONS IN INDENTED GAALAS. 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104, 293–296.

MLA Style

Charsley, P, and R Haswell. “DISLOCATIONS IN INDENTED GAALAS.” 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, vol. 104, 1989, pp. 293–96.

Chicago Style

Charsley, P, and R Haswell. 1989. “DISLOCATIONS IN INDENTED GAALAS.” In 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS, 104:293–96.
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Authors

+ Charsley, P More by this author

Role:: Author

+ Haswell, R More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 293-296
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: GAAS

Behavior
Pubs id:: pubs:15829
UUID:: uuid:ee8eae06-d01e-4c12-85d9-b3bb11b5c2e3
Local pid:: pubs:15829
Source identifiers:: 15829
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_ee8eae06d01e4c1285d9b3bb11b5c2e3

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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