Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Journal article

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. © 2012 IOP Publishing Ltd.

Authors: Kim, J; Moon, SR; Kim, Y; Chen, Z; Zou, J

• Journal: Nanotechnology
• Volume: 23
• Issue: 11
• Publication date: 2012-03-23
• DOI: 10.1088/0957-4484/23/11/115603
• EISSN: 1361-6528
• ISSN: 0957-4484
• Language: English