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Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Abstract:

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges fo...

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Journal:
Nanotechnology
Volume:
23
Issue:
11
Publication date:
2012-03-23
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
URN:
uuid:ee6fe90f-c1d8-40e6-9693-7589957358b6
Source identifiers:
342912
Local pid:
pubs:342912
Language:
English

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