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InP nanowires grown by SA-MOVPE

Abstract:
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.

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Publisher copy:
10.1109/COMMAD.2012.6472352

Authors


Parkinson, P More by this author
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Pages:
45-46
Publication date:
2012
DOI:
URN:
uuid:edf85a2b-0768-417c-a8c5-64657f4a8d08
Source identifiers:
423476
Local pid:
pubs:423476
ISBN:
9781467330459

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