Conference item

InP nanowires grown by SA-MOVPE

Abstract:: A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.

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APA Style

Gao, Q., Tan, H., Fu, L., Parkinson, P., Breuer, S., Wong-Leung, J., & Jagadish, C. (2012). InP nanowires grown by SA-MOVPE. 45–46.

MLA Style

Gao, Q., et al. InP Nanowires Grown by SA-MOVPE. 2012, pp. 45–46.

Chicago Style

Gao, Q, H Tan, L Fu, P Parkinson, S Breuer, J Wong-Leung, and C Jagadish. 2012. “InP Nanowires Grown by SA-MOVPE.” In , 45–46.
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Publisher copy:: 10.1109/COMMAD.2012.6472352

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+ Gao, Q More by this author

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+ Tan, H More by this author

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+ Fu, L More by this author

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+ Parkinson, P More by this author

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+ Breuer, S More by this author

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Bibliographic Details

Host title:: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages:: 45-46
Publication date:: 2012-01-01
DOI:: 10.1109/COMMAD.2012.6472352
ISBN:: 9781467330459

Item Description

Pubs id:: pubs:423476
UUID:: uuid:edf85a2b-0768-417c-a8c5-64657f4a8d08
Local pid:: pubs:423476
Source identifiers:: 423476
Deposit date:: 2013-11-16

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Copyright date:: 2012

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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