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CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY

Publication status:
Published

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Publisher copy:
10.1007/BF02665974

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Journal:
JOURNAL OF ELECTRONIC MATERIALS More from this journal
Volume:
20
Issue:
10
Pages:
855-859
Publication date:
1991-10-01
Event title:
SYMP AT THE 1991 ANNUAL MEETING OF THE MINERALS, METALS AND MATERIALS SOC : STRAIN RELAXATION IN EPITAXIAL FILMS
DOI:
EISSN:
1543-186X
ISSN:
0361-5235


Keywords:
Pubs id:
pubs:19392
UUID:
uuid:ed74c5e8-a0f4-4871-8499-5558b19fd8ae
Local pid:
pubs:19392
Source identifiers:
19392
Deposit date:
2012-12-19
ARK identifier:

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