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NiOx hole transport layers enable industrial-scale, large-area heterojunction solar cells with efficiencies approaching 24%

Abstract:

Transparent passivated contacts (TPCs) have recently emerged as a promising strategy for enhancing the performance of silicon heterojunction (SHJ) solar cells, particularly with the development of efficient hole transport layers (HTLs). In this study, an optimized, a scalable NiOx hole transport layer was successfully implemented on industrial-scale SHJ solar cells with an area of 220.5 cm2 via electron beam physical vapor deposition (EB-PVD). A NiOx HTL enables, a short-circuit current density (Jsc) of 40.06 mA/cm2, but the open-circuit voltage (Voc) was limited to 512 mV due to interfacial recombination. To address this, an ultra-thin p-type microcrystalline silicon (nc-Si:H(p+)) buffer layer with a thickness of 5 nm was inserted between the nc-Si:H(i) and NiOx layers, forming an nc-Si:H(i)/nc-Si:H(p+)/NiOx hetero-structure. This interfacial engineering strategy effectively suppressed carrier recombination, resulting in a substantial increase in the Voc to 746 mV. The high passivation was accompanied by an enhancement carrier collection as seen by a fill factor of 81.96 %, thereby enabling a power conversion efficiency (PCE) of 23.89 % - among the highest for NiOx-based SHJ solar cells. This study demonstrates the feasibility of integrating a novel dopant-free hole transport layer into industrial-scale, large-area silicon solar cells through rational interface engineering.

Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1016/j.solmat.2025.114053

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Funder identifier:
https://ror.org/0439y7842
Grant:
EP/X037169/1


Publisher:
Elsevier
Journal:
Solar Energy Materials and Solar Cells More from this journal
Volume:
296
Article number:
114053
Publication date:
2025-11-08
Acceptance date:
2025-11-01
DOI:
EISSN:
1879-3398
ISSN:
0927-0248


Language:
English
Keywords:
Pubs id:
2321921
UUID:
uuid_ecd8f7c8-57f0-4fd2-a552-514bb371575b
Local pid:
pubs:2321921
Deposit date:
2025-12-23
ARK identifier:

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