Journal article
NiOx hole transport layers enable industrial-scale, large-area heterojunction solar cells with efficiencies approaching 24%
- Abstract:
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Transparent passivated contacts (TPCs) have recently emerged as a promising strategy for enhancing the performance of silicon heterojunction (SHJ) solar cells, particularly with the development of efficient hole transport layers (HTLs). In this study, an optimized, a scalable NiOx hole transport layer was successfully implemented on industrial-scale SHJ solar cells with an area of 220.5 cm2 via electron beam physical vapor deposition (EB-PVD). A NiOx HTL enables, a short-circuit current density (Jsc) of 40.06 mA/cm2, but the open-circuit voltage (Voc) was limited to 512 mV due to interfacial recombination. To address this, an ultra-thin p-type microcrystalline silicon (nc-Si:H(p+)) buffer layer with a thickness of 5 nm was inserted between the nc-Si:H(i) and NiOx layers, forming an nc-Si:H(i)/nc-Si:H(p+)/NiOx hetero-structure. This interfacial engineering strategy effectively suppressed carrier recombination, resulting in a substantial increase in the Voc to 746 mV. The high passivation was accompanied by an enhancement carrier collection as seen by a fill factor of 81.96 %, thereby enabling a power conversion efficiency (PCE) of 23.89 % - among the highest for NiOx-based SHJ solar cells. This study demonstrates the feasibility of integrating a novel dopant-free hole transport layer into industrial-scale, large-area silicon solar cells through rational interface engineering.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Accepted manuscript, pdf, 1.2MB, Terms of use)
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- Publisher copy:
- 10.1016/j.solmat.2025.114053
Authors
- Funder identifier:
- https://ror.org/0439y7842
- Grant:
- EP/X037169/1
- Publisher:
- Elsevier
- Journal:
- Solar Energy Materials and Solar Cells More from this journal
- Volume:
- 296
- Article number:
- 114053
- Publication date:
- 2025-11-08
- Acceptance date:
- 2025-11-01
- DOI:
- EISSN:
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1879-3398
- ISSN:
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0927-0248
- Language:
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English
- Keywords:
- Pubs id:
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2321921
- UUID:
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uuid_ecd8f7c8-57f0-4fd2-a552-514bb371575b
- Local pid:
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pubs:2321921
- Deposit date:
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2025-12-23
- ARK identifier:
Terms of use
- Copyright holder:
- Elsevier B.V.
- Copyright date:
- 2025
- Rights statement:
- © 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
- Notes:
- The author accepted manuscript (AAM) of this paper has been made available under the University of Oxford's Open Access Publications Policy, and a CC BY public copyright licence has been applied.
- Licence:
- CC Attribution (CC BY)
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