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ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES

Abstract:

Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By contrast, hydrophilic oxides grown by low-temperature chemical treatments have a layered structure, SiO2 /SiO/Si. Low-temperature air-grown and chemical oxides on GaAs have a composition (GaAs)2O3...

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Publication status:
Published

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Publisher copy:
10.1063/1.343185

Authors


GROVENOR, C More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
65
Issue:
12
Pages:
5089-5095
Publication date:
1989-06-15
DOI:
ISSN:
0021-8979
URN:
uuid:ecac3e6a-d0a8-43b3-809a-be25a0b359b4
Source identifiers:
18061
Local pid:
pubs:18061
Language:
English

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