Journal article

Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.

Abstract:: The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

Publication status:: Published

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APA Style

Hiskett, P., Buller, G., Loudon, A., Smith, J., Gontijo, I., Walker, A., Townsend, P., & Robertson, M. (2000). Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm. Applied Optics, 39(36), 6818–6829.

MLA Style

Hiskett, P, et al. “Performance and Design of InGaAs /InP Photodiodes for Single-Photon Counting at 1.55 Microm.” Applied Optics, vol. 39, no. 36, 2000, pp. 6818–29.

Chicago Style

Hiskett, P, G Buller, A Loudon, et al. 2000. “Performance and Design of InGaAs /InP Photodiodes for Single-Photon Counting at 1.55 Microm.” Applied Optics 39 (36): 6818–29.
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Publisher copy:: 10.1364/AO.39.006818

Authors

+ Hiskett, P More by this author

Role:: Author

+ Buller, G More by this author

Role:: Author

+ Loudon, A More by this author

Role:: Author

+ Smith, J More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

+ Gontijo, I More by this author

Role:: Author

More authors...

Journal:: Applied optics More from this journal
Volume:: 39
Issue:: 36
Pages:: 6818-6829
Publication date:: 2000-12-01
DOI:: 10.1364/AO.39.006818
EISSN:: 1539-4522
ISSN:: 0003-6935

Language:: English
Pubs id:: pubs:135241
UUID:: uuid:eb70ec7d-53fc-494c-828a-cf9436348414
Local pid:: pubs:135241
Source identifiers:: 135241
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_eb70ec7d53fc494c828acf9436348414

Terms of use

Copyright date:: 2000

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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